Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

Shockley-Frank stacking faults in 6H-SiC

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the exciton...

Shallow P donors in 3C-, 4H-, and 6H-SiC

EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free f...

Optical Investigations of stacking faults in 4H-SiC epitaxial layers: comparison of 3C and 8H polytypes

We present an analysis of the electronic structure of in-grown 3C and 8H stacking faults (SFs) in a 4H-SiC matrix. First the concept of low temperature photoluminescence optical signature of SFs is discussed. Then, the results of type-II quantum well (QW) model calculations are displayed, taking into account the effect of valence band offset, internal polarization field and non homogeneity of t...

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...